Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | BD237 | BD237 Series |
|---|---|---|
| - | - | |
| Current - Collector (Ic) (Max) [Max] | 2 A | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 µA | 100 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 hFE | 25 hFE |
| Mounting Type | Through Hole | Through Hole |
| Operating Temperature | 150 °C | 150 °C |
| Package / Case | TO-225AA, TO-126-3 | TO-225AA, TO-126-3 |
| Power - Max [Max] | 25 W | 25 W |
| Supplier Device Package | SOT-32-3 | SOT-32-3 |
| Transistor Type | NPN | NPN |
| Vce Saturation (Max) @ Ib, Ic | 600 mV | 600 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
BD237 Series
COMPLEMENTARY SILICON POWER TRANSISTORS
| Part | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Mounting Type | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Operating Temperature | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics BD237 | |||||||||||
STMicroelectronics BD237 | |||||||||||
STMicroelectronics BD237 | 25 hFE | 600 mV | SOT-32-3 | Through Hole | 25 W | 80 V | NPN | 150 °C | 100 µA | 2 A | TO-126-3, TO-225AA |
STMicroelectronics BD237 |
Description
General part information
BD237 Series
The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are BD236 and BD238 respectively.