Description
General part information
IPD12CNE8N G
MOSFET N-CH 85V 67A TO252-3
Technical Specifications
Parameters and characteristics for this part
| Specification | IPD12CNE8N G |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 67 A |
| Drain to Source Voltage (Vdss) | 85 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 64 nC |
| Input Capacitance (Ciss) (Max) | 4340 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | PG-TO252-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) | 12.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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