BYW80FP-200

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STMicroelectronics

DIODE GP 200V 10A TO220FPAC

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STMicroelectronics

DIODE GP 200V 10A TO220FPAC

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BYW80FP-200	BYW80 Series

Current - Average Rectified (Io)	10 A	10 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction	150 °C	150 °C
Package / Case	TO-220-3 Full Pack	TO-220-2, TO-220-3 Full Pack
Reverse Recovery Time (trr)	35 ns	35 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	-	TO-220AC
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V	200 V
Voltage - Forward (Vf) (Max) @ If	1.15 V	1.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

DIODE GEN PURP 200V 10A TO220AC

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Package / Case	Mounting Type	Operating Temperature - Junction	Speed	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Technology
STMicroelectronics BYW80-200	10 µA	200 V	35 ns	10 A	TO-220-2	Through Hole	150 °C	200 mA, 500 ns	TO-220AC	1.15 V	Standard
STMicroelectronics BYW80FP-200	10 µA	200 V	35 ns	10 A	TO-220-3 Full Pack	Through Hole	150 °C	200 mA, 500 ns		1.15 V	Standard

General part information

Diode 200 V 10A Through Hole TO-220FPAC

Technical documentation and resources