C2M0025120D

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Wolfspeed

TO-247-3 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

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Wolfspeed

TO-247-3 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	C2M0025120D

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	161 nC
Input Capacitance (Ciss) (Max) @ Vds	2788 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	463 W
Rds On (Max) @ Id, Vgs [Max]	34 mOhm
Supplier Device Package	TO-247-3
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	2.4 V

TO-247-3 SILICON CARBIDE FIELD EFFECT TRANSISTOR (MOSFET) ROHS

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max) [Min]	Vgs (Max) [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type
Wolfspeed C2M0025120D	Through Hole	2788 pF	TO-247-3	90 A	2.4 V	-55 °C	150 °C	1200 V	161 nC	34 mOhm	-10 V	25 V	TO-247-3	463 W	N-Channel

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General part information

N-Channel 1200 V 90A (Tc) 463W (Tc) Through Hole TO-247-3

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