S40YR

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GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV 40A DO5

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GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV 40A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	S40YR

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Speed	Speed	Package / Case
GeneSiC Semiconductor S40YR	160 °C	-65 C	Reverse Polarity Standard	10 µA	40 A	Chassis Stud Mount	1.1 V	DO-5	Standard Recovery >500ns	200 mA	DO-203AB DO-5 Stud

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	800	$ 7.06

General part information

Diode 1600 V 40A Chassis, Stud Mount DO-5

Technical documentation and resources