
DG2016DQ-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
IC SWITCH SPDT X 2 4OHM 10MSOP
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DG2016DQ-T1-E3
ObsoleteVishay General Semiconductor - Diodes Division
IC SWITCH SPDT X 2 4OHM 10MSOP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DG2016DQ-T1-E3 |
|---|---|
| Channel Capacitance (CS(off), CD(off)) [custom] | 14 pF |
| Channel Capacitance (CS(off), CD(off)) [custom] | 14 pF |
| Charge Injection | 79 pC |
| Crosstalk | -82 dB |
| Current - Leakage (IS(off)) (Max) | 1 nA |
| Mounting Type | Surface Mount |
| Multiplexer/Demultiplexer Circuit | 2:1 |
| Number of Circuits | 2 |
| On-State Resistance (Max) [Max] | 4 Ohm |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 10-MSOP, 10-TFSOP |
| Package / Case [x] | 3 mm |
| Package / Case [x] | 0.118 in |
| Supplier Device Package | 10-MSOP |
| Switch Circuit | SPDT |
| Switch Time (Ton, Toff) (Max) [custom] | 48 ns |
| Switch Time (Ton, Toff) (Max) [custom] | 33 ns |
| Voltage - Supply, Single (V+) [Max] | 5.5 V |
| Voltage - Supply, Single (V+) [Min] | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
DG2016 Series
2 Circuit IC Switch 2:1 4Ohm 10-MSOP
Documents
Technical documentation and resources
No documents available