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DG2016DQ-T1-E3 - 10-MSOP

DG2016DQ-T1-E3

Obsolete
Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 4OHM 10MSOP

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DG2016DQ-T1-E3 - 10-MSOP

DG2016DQ-T1-E3

Obsolete
Vishay General Semiconductor - Diodes Division

IC SWITCH SPDT X 2 4OHM 10MSOP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDG2016DQ-T1-E3
Channel Capacitance (CS(off), CD(off)) [custom]14 pF
Channel Capacitance (CS(off), CD(off)) [custom]14 pF
Charge Injection79 pC
Crosstalk-82 dB
Current - Leakage (IS(off)) (Max)1 nA
Mounting TypeSurface Mount
Multiplexer/Demultiplexer Circuit2:1
Number of Circuits2
On-State Resistance (Max) [Max]4 Ohm
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case10-MSOP, 10-TFSOP
Package / Case [x]3 mm
Package / Case [x]0.118 in
Supplier Device Package10-MSOP
Switch CircuitSPDT
Switch Time (Ton, Toff) (Max) [custom]48 ns
Switch Time (Ton, Toff) (Max) [custom]33 ns
Voltage - Supply, Single (V+) [Max]5.5 V
Voltage - Supply, Single (V+) [Min]1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

DG2016 Series

2 Circuit IC Switch 2:1 4Ohm 10-MSOP

Documents

Technical documentation and resources

No documents available