BPW17N

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1040 NM

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Vishay General Semiconductor - Diodes Division

PHOTOTRANSISTOR 450 TO 1040 NM

Technical Specifications

Parameters and characteristics for this part

Specification	BPW17N

Current - Collector (Ic) (Max)	1 mA
Current - Dark (Id) (Max) [Max]	200 nA
Mounting Type	Through Hole
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-40 °C
Orientation	Top View
Package / Case	Radial
Power - Max [Max]	100 mW
Viewing Angle	24 °
Voltage - Collector Emitter Breakdown (Max)	32 V
Wavelength	825 nm

Part	Mounting Type	Wavelength	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Viewing Angle	Operating Temperature [Max]	Operating Temperature [Min]	Current - Dark (Id) (Max) [Max]	Power - Max [Max]	Current - Collector (Ic) (Max)	Orientation
Vishay General Semiconductor - Diodes Division BPW17N	Through Hole	825 nm	Radial	32 V	24 °	100 °C	-40 °C	200 nA	100 mW	1 mA	Top View

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General part information

Phototransistors 825nm Top View Radial

Technical documentation and resources