BTS7904BATMA1

Obsolete

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

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Obsolete

Infineon Technologies

MOSFET N/P-CH 55V/30V 40A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	BTS7904BATMA1

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	55 V, 30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	121 nC
Input Capacitance (Ciss) (Max) @ Vds	6100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-6, TO-263BA, D2PAK (5 Leads + Tab)
Power - Max	69 W, 96 W
Rds On (Max) @ Id, Vgs	11.7 mOhm
Supplier Device Package	PG-TO263-5-1
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.2 V

Part	Supplier Device Package	Technology	Power - Max	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Configuration	Vgs(th) (Max) @ Id	Package / Case	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies BTS7904BATMA1	PG-TO263-5-1	MOSFET (Metal Oxide)	69 W 96 W	121 nC	30 V 55 V	Surface Mount	6100 pF	40 A	11.7 mOhm	N and P-Channel	2.2 V	D2PAK (5 Leads + Tab) TO-263-6 TO-263BA	Logic Level Gate	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 55V, 30V 40A 69W, 96W Surface Mount PG-TO263-5-1

Technical documentation and resources