STW45NM50FD

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STMicroelectronics

MOSFET N-CH 500V 45A TO247-3

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STMicroelectronics

MOSFET N-CH 500V 45A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW45NM50FD

Current - Continuous Drain (Id) @ 25°C	45 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	417 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 500V 45A TO247-3

Part	Technology	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STW45NM50FD	MOSFET (Metal Oxide)	N-Channel	30 V	417 W	Through Hole	120 nC	10 V	TO-247-3	500 V	TO-247-3	100 mOhm	5 V	150 °C	-65 °C	3600 pF	45 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 45A (Tc) 417W (Tc) Through Hole TO-247-3

Technical documentation and resources