1N1183R

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GeneSiC Semiconductor

DIODE GEN PURP REV 50V 35A DO5

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GeneSiC Semiconductor

DIODE GEN PURP REV 50V 35A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N1183R

Current - Average Rectified (Io)	35 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	50 V

DIODE GEN PURP REV 50V 35A DO5

Part	Current - Average Rectified (Io)	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Speed	Speed	Technology
GeneSiC Semiconductor 1N1183R	35 A	DO-5	Chassis, Stud Mount	50 V	DO-203AB, DO-5, Stud	190 °C	-65 C	10 µA	Standard Recovery >500ns	200 mA	Reverse Polarity, Standard

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General part information

Diode 50 V 35A Chassis, Stud Mount DO-5

Technical documentation and resources