PDV-P9002-1

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Advanced Photonix

CDS PHOTORES 11K-27KOHM 4.20MM

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Active

Advanced Photonix

CDS PHOTORES 11K-27KOHM 4.20MM

Technical Specifications

Parameters and characteristics for this part

Specification	PDV-P9002-1

Cell Resistance @ Illuminance [Max]	27 kOhms
Cell Resistance @ Illuminance [Min]	11 kOhms
Fall Time (Typ)	25 ms
Mounting Type	Through Hole
Operating Temperature [Max]	75 ░C
Operating Temperature [Min]	-30 ░C
Package / Case	Radial
Rise Time (Typ)	60 ms
Voltage - Max [Max]	150 Vpk
Wavelength	520 nm

CDS PHOTORES 11K-27KOHM 4.20MM

Part	Package / Case	Mounting Type	Wavelength	Rise Time (Typ)	Fall Time (Typ)	Operating Temperature [Min]	Operating Temperature [Max]	Cell Resistance @ Illuminance [Max]	Cell Resistance @ Illuminance [Min]	Voltage - Max [Max]
Advanced Photonix PDV-P9002-1	Radial	Through Hole	520 nm	60 ms	25 ms	-30 ░C	75 ░C	27 kOhms	11 kOhms	150 Vpk

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

CdS Cells 520nm 11 ~ 27kOhms @ 10 lux

Technical documentation and resources