
1N5407G
ActiveSMC Diode Solutions
DIODE GEN PURP 800V 3A DO201AD
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1N5407G
ActiveSMC Diode Solutions
DIODE GEN PURP 800V 3A DO201AD
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 1N5407G |
|---|---|
| Capacitance @ Vr, F | 30 pF |
| Current - Average Rectified (Io) | 3 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-201AD, Axial |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | DO-201AD |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 1 | $ 0.62 | |
| 10 | $ 0.38 | |||
| 100 | $ 0.24 | |||
| 500 | $ 0.18 | |||
| 1000 | $ 0.16 | |||
| 2000 | $ 0.15 | |||
| 5000 | $ 0.13 | |||
| 10000 | $ 0.12 | |||
| 50000 | $ 0.10 | |||
Description
General part information
1N540 Series
Diode 800 V 3A Through Hole DO-201AD
Documents
Technical documentation and resources