SUP18N15-95-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 18A TO220-3

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET N-CH 150V 18A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SUP18N15-95-E3

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	88 W
Rds On (Max) @ Id, Vgs	95 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Technology	Supplier Device Package
Vishay General Semiconductor - Diodes Division SUP18N15-95-E3	25 nC	900 pF	Through Hole	N-Channel	150 V	18 A	2 V	95 mOhm	TO-220-3	-55 °C	175 ░C	20 V	6 V 10 V	88 W	MOSFET (Metal Oxide)	TO-220AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 150 V 18A (Tc) 88W (Tc) Through Hole TO-220AB

Technical documentation and resources

No documents available