STTA806D

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STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

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STMicroelectronics

DIODE GEN PURP 600V 8A TO220AC

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	STTA806D	STTA806 Series

Current - Average Rectified (Io)	8 A	8 A
Current - Reverse Leakage @ Vr	100 µA	100 µA
Mounting Type	Through Hole	Through Hole, Surface Mount
Operating Temperature - Junction	150 °C	150 °C
Package / Case	TO-220-2	TO-220-2, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	52 ns	52 ns
Speed	200 mA, 500 ns	200 - 500 mA
Supplier Device Package	TO-220AC	TO-220AC, D2PAK
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	600 V
Voltage - Forward (Vf) (Max) @ If	1.75 V	1.75 V

DIODE GEN PURP 600V 8A TO220AC

Part	Operating Temperature - Junction	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Supplier Device Package	Mounting Type	Speed	Package / Case	Technology
STMicroelectronics STTA806D	150 °C	1.75 V	100 µA	600 V	8 A	52 ns	TO-220AC	Through Hole	200 mA, 500 ns	TO-220-2	Standard
STMicroelectronics STTA806G	150 °C	1.75 V	100 µA	600 V	8 A	52 ns	D2PAK	Surface Mount	200 mA, 500 ns	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 8A Through Hole TO-220AC

Technical documentation and resources