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BYR29-600,127 - TO-220-2

BYR29-600,127

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A TO220AC

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BYR29-600,127 - TO-220-2

BYR29-600,127

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 8A TO220AC

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYR29-600,127
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction150 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.5 V, 8 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 652$ 0.46
Tube 6000$ 0.42

Description

General part information

BYR29-600,127

Diode 600 V 8A Through Hole TO-220AC

Documents

Technical documentation and resources

No documents available