BDX53BFP

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STMicroelectronics

TRANS NPN DARL 80V 8A TO220FP

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STMicroelectronics

TRANS NPN DARL 80V 8A TO220FP

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	BDX53BFP	BDX53 Series

	-	-
Current - Collector (Ic) (Max) [Max]	8 A	8 A
Current - Collector Cutoff (Max) [Max]	500 çA	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce	750 hFE	750 hFE
Mounting Type	Through Hole	Through Hole
Operating Temperature	150 °C	150 °C
Package / Case	TO-220-3 Full Pack	TO-220-3, TO-220-3 Full Pack
Power - Max [Max]	29 W	29 - 60 W
Supplier Device Package	TO-220FP	TO-220, TO-220FP
Vce Saturation (Max) @ Ib, Ic	2 V	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V	80 - 100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

NPN power Darlington transistor

Part	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Package / Case	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic
STMicroelectronics BDX53B
STMicroelectronics BDX53B	TO-220	750 hFE	TO-220-3	500 çA	80 V	150 °C	60 W	8 A	Through Hole	2 V
STMicroelectronics BDX53BFP	TO-220FP	750 hFE	TO-220-3 Full Pack	500 çA	80 V	150 °C	29 W	8 A	Through Hole	2 V
STMicroelectronics BDX53B
STMicroelectronics BDX53C	TO-220	750 hFE	TO-220-3	500 çA	100 V	150 °C	60 W	8 A	Through Hole	2 V
STMicroelectronics BDX53B
STMicroelectronics BDX53C
STMicroelectronics BDX53C

General part information

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Technical documentation and resources