AS1M025120T
ActiveANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL SILICON CARBIDE POWER
AS1M025120T
ActiveANBON SEMICONDUCTOR (INT'L) LIMITED
N-CHANNEL SILICON CARBIDE POWER
Description
General part information
AS1M025120T
N-Channel 1200 V 65A (Tc) 370W (Tc) Through Hole TO-247-4
Technical Specifications
Parameters and characteristics for this part
| Specification | AS1M025120T |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 65 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 195 nC |
| Input Capacitance (Ciss) (Max) | 4200 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4 |
| Power Dissipation (Max) | 370 W |
| Rds On (Max) | 34 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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