STW38NB20

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STMicroelectronics

MOSFET N-CH 200V 38A TO247-3

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STMicroelectronics

MOSFET N-CH 200V 38A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW38NB20

Current - Continuous Drain (Id) @ 25°C	38 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC
Input Capacitance (Ciss) (Max) @ Vds	3800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs [Max]	65 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

MOSFET N-CH 200V 38A TO247-3

Part	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Mounting Type	Operating Temperature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STW38NB20	180 W	95 nC	65 mOhm	5 V	200 V	38 A	N-Channel	TO-247-3	30 V	10 V	MOSFET (Metal Oxide)	Through Hole	150 °C	TO-247-3	3800 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 38A (Tc) 180W (Tc) Through Hole TO-247-3

Technical documentation and resources