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BY255

BY255

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EIC Semiconductor

DIODE GEN PURP 1.3KV 3A DO201AD

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BY255

BY255

Active
EIC Semiconductor

DIODE GEN PURP 1.3KV 3A DO201AD

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Description

General part information

BY255

Diode 1300 V 3A Through Hole DO-201AD

Technical Specifications

Parameters and characteristics for this part

SpecificationBY255
Capacitance50 pF
Current - Average Rectified (Io)3 A
Current - Reverse Leakage20 µA
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseDO-201AD, Axial
Package NameDO-201AD
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)1300 V
Voltage - Forward (Vf) (Max)1.1 V

Pricing

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CAD

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Documents

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