1S953-T2

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Renesas Electronics Corporation

HIGH SPEED SWITCHING DIODE

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Renesas Electronics Corporation

HIGH SPEED SWITCHING DIODE

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	1S953-T2	1S95 Series

Capacitance @ Vr, F	-	2 pF
Current - Average Rectified (Io)	-	100 mA
Current - Reverse Leakage @ Vr	-	100 nA
Mounting Type	-	Through Hole
null		-
Operating Temperature - Junction	-	200 °C
Package / Case	-	Axial, DO-35, DO-204AH
Speed	-	Any Speed
Speed	-	200 mA
Supplier Device Package	-	DO-35
Technology	-	Standard
Voltage - DC Reverse (Vr) (Max)	-	30 V
Voltage - Forward (Vf) (Max) @ If	-	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	3245	$ 0.09

1S953 - HIGH SPEED SWITCHING EPI

Part	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction	Technology	Supplier Device Package	Package / Case	Speed	Speed
Renesas Electronics Corporation 1S953-T4
Renesas Electronics Corporation 1S953-T4-AZ
Renesas Electronics Corporation 1S953-T2
Renesas Electronics Corporation 1S953-T1
Renesas Electronics Corporation 1S953-TB
Renesas Electronics Corporation 1S953-TB-AZ
Renesas Electronics Corporation 1S953	100 nA	30 V	1 V	100 mA	Through Hole	2 pF	200 °C	Standard	DO-35	Axial, DO-204AH, DO-35	Any Speed	200 mA

General part information

Diode

Technical documentation and resources

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