S4J R7G

Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 4A DO214AB

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Unknown

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 4A DO214AB

Technical Specifications

Parameters and characteristics for this part

Specification	S4J R7G

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	4 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SMC, DO-214AB
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AB (SMC)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.15 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Current - Average Rectified (Io)	Capacitance @ Vr, F	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Speed	Speed	Technology
Taiwan Semiconductor Corporation S4J V7G	Surface Mount	600 V	1500 ns	1.15 V	4 A	60 pF	DO-214AB (SMC)	150 °C	-55 °C	DO-214AB SMC	10 µA	Standard Recovery >500ns	200 mA	Standard
Taiwan Semiconductor Corporation S4J	Surface Mount	600 V	1500 ns		4 A	60 pF	DO-214AB (SMC)	150 °C	-55 °C	DO-214AB SMC	100 µA	Standard Recovery >500ns	200 mA	Standard
Taiwan Semiconductor Corporation S4J R7G	Surface Mount	600 V		1.15 V	4 A	60 pF	DO-214AB (SMC)	150 °C	-55 °C	DO-214AB SMC	10 µA		200 mA 500 ns	Standard

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General part information

Diode 600 V 4A Surface Mount DO-214AB (SMC)

Technical documentation and resources