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G16P03D3

G16P03D3

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Goford Semiconductor

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

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G16P03D3

G16P03D3

Active
Goford Semiconductor

P30V,RD(MAX)<12M@-10V,RD(MAX)<18

Find alt

Description

General part information

G16P03D3

P-Channel 30 V 45A (Tc) 55W (Tc) Surface Mount 8-DFN (3.15x3.05)

Technical Specifications

Parameters and characteristics for this part

SpecificationG16P03D3
Current - Continuous Drain (Id) (Tc)45 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Max)35 nC
Input Capacitance (Ciss) (Max)2805 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case8-PowerVDFN
Package Length3.15 mm
Package Name8-DFN
Package Width3.05 mm
Power Dissipation (Max)55 W
Rds On (Max)12 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.5 V

Pricing

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CAD

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Documents

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