TC6320K6-G
ActiveN/P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET PAIR
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TC6320K6-G
ActiveN/P-CHANNEL ENHANCEMENT-MODE DUAL MOSFET PAIR
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TC6320K6-G | TC6320 Series |
|---|---|---|
| - | - | |
| Configuration | N and P-Channel | N and P-Channel |
| Drain to Source Voltage (Vdss) | 200 V | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 110 pF, 125 pF | 110 - 125 pF |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature [Max] | 150 °C | 150 °C |
| Operating Temperature [Min] | -55 °C | -55 °C |
| Package / Case | 8-VDFN Exposed Pad | 8-VDFN Exposed Pad, 8-SOIC |
| Package / Case | - | 3.9 mm |
| Package / Case | - | 0.154 in |
| Rds On (Max) @ Id, Vgs | 7 Ohm | 7 Ohm |
| Supplier Device Package | 8-DFN (4x4) | 8-DFN (4x4), 8-SOIC |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2 V | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.73 | |
| 25 | $ 1.44 | |||
| 100 | $ 1.32 | |||
| Digi-Reel® | 1 | $ 1.73 | ||
| 25 | $ 1.44 | |||
| 100 | $ 1.32 | |||
| Tape & Reel (TR) | 3300 | $ 1.32 | ||
| Microchip Direct | T/R | 1 | $ 1.73 | |
| 25 | $ 1.44 | |||
| 100 | $ 1.32 | |||
| 1000 | $ 1.27 | |||
| 5000 | $ 1.26 | |||
TC6320 Series
N/P-Channel Enhancement-Mode Dual MOSFET Pair
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Configuration | Mounting Type | Package / Case [y] | Package / Case [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TC6320TG-G | |||||||||||||
Microchip Technology TC6320TG-G | |||||||||||||
Microchip Technology TC6320K6-G | |||||||||||||
Microchip Technology TC6320TG-G | |||||||||||||
Microchip Technology TC6320K6-G | -55 °C | 150 °C | MOSFET (Metal Oxide) | 200 V | 8-DFN (4x4) | 8-VDFN Exposed Pad | 7 Ohm | 110 pF, 125 pF | 2 V | N and P-Channel | Surface Mount | ||
Microchip Technology TC6320TG-G | -55 °C | 150 °C | MOSFET (Metal Oxide) | 200 V | 8-SOIC | 8-SOIC | 7 Ohm | 110 pF, 125 pF | 2 V | N and P-Channel | Surface Mount | 3.9 mm | 0.154 in |
Description
General part information
TC6320 Series
TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are desired for high voltage pulser applications. It is a complementary, high-speed, high voltage, GATE-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources