C3M0120090J

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SICFET N-CH 900V 22A D2PAK-7

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SICFET N-CH 900V 22A D2PAK-7

Technical Specifications

Parameters and characteristics for this part

Specification	C3M0120090J

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.3 nC
Input Capacitance (Ciss) (Max) @ Vds	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	TO-263-7
Vgs (Max) [Max]	18 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	3.5 V

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General part information

N-Channel 900 V 22A (Tc) 83W (Tc) Surface Mount TO-263-7

Technical documentation and resources