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1N1188

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GeneSiC Semiconductor

DIODE GEN PURP 400V 35A DO5

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1N1188 - 1N1188

1N1188

Active
GeneSiC Semiconductor

DIODE GEN PURP 400V 35A DO5

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification1N1188
Current - Average Rectified (Io)35 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeChassis, Stud Mount
Operating Temperature - Junction [Max]190 °C
Operating Temperature - Junction [Min]-65 C
Package / CaseDO-203AB, DO-5, Stud
SpeedStandard Recovery >500ns
Speed200 mA
Supplier Device PackageDO-5
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 64.58
800$ 6.23

Description

General part information

1N1188

Diode 400 V 35A Chassis, Stud Mount DO-5

Documents

Technical documentation and resources