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Description

General part information

LPT16ED

RF Transistor NPN 4V 80mA 16GHz 250mW Surface Mount Die

Technical Specifications

Parameters and characteristics for this part

SpecificationLPT16ED
Current - Collector (Ic) (Max)0.08 mA
DC Current Gain (hFE) (Min)50
Frequency - Transition16 GHz
Gain5.2 dB
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseDie
Package NameDie
Power - Max250 mW
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4 V

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