1N1190AR

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

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GeneSiC Semiconductor

DIODE GEN PURP REV 600V 40A DO5

Technical Specifications

Parameters and characteristics for this part

Specification	1N1190AR

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	190 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AB, DO-5, Stud
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-5
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

DIODE GEN PURP REV 600V 40A DO5

Part	Speed	Speed	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Technology	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
GeneSiC Semiconductor 1N1190AR	Standard Recovery >500ns	200 mA	40 A	600 V	10 µA	Reverse Polarity, Standard	Chassis, Stud Mount	1.1 V	DO-5	DO-203AB, DO-5, Stud	190 °C	-65 C

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General part information

Diode 600 V 40A Chassis, Stud Mount DO-5

Technical documentation and resources