ES2E-HF

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Comchip Technology

DIODE GEN PURP 300V 2A DO214AC

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Comchip Technology

DIODE GEN PURP 300V 2A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	ES2E-HF

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	2 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.25 V

DIODE GEN PURP 300V 2A DO214AC

Part	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Technology	Speed	Voltage - DC Reverse (Vr) (Max) [Max]
Comchip Technology ES2E-HF	2 A	1.25 V	Surface Mount	40 pF	150 °C	-55 °C	5 µA	DO-214AC (SMA)	35 ns	DO-214AC, SMA	Standard	200 mA, 500 ns	300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 300 V 2A Surface Mount DO-214AC (SMA)

Technical documentation and resources

No documents available