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FDP047AN08A0

FDP047AN08A0

NRND
ON Semiconductor

POWER MOSFET, N CHANNEL, 75 V, 80 A, 0.004 OHM, TO-220AB, THROUGH HOLE

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FDP047AN08A0

FDP047AN08A0

NRND
ON Semiconductor

POWER MOSFET, N CHANNEL, 75 V, 80 A, 0.004 OHM, TO-220AB, THROUGH HOLE

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Description

General part information

FDP047AN08A0 Series

N-Channel PowerTrench<sup>®</sup> MOSFET 75V, 80A, 4.7mΩ

Technical Specifications

Parameters and characteristics for this part

SpecificationFDP047AN08A0
Current - Continuous Drain (Id) (Tc)15 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)138 nC, 138 nC
Input Capacitance (Ciss) (Max)6600 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-220-3
Package NameTO-220-3
Power Dissipation (Max)310 W
Rds On (Max)4.7 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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