FDMC4D9P20X8
ObsoleteON Semiconductor
P‐CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET, -20V, -75A, 4.9MΩ
FDMC4D9P20X8
ObsoleteON Semiconductor
P‐CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET, -20V, -75A, 4.9MΩ
Description
General part information
FDMC4D9P20X8
This P−Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench®process that has been optimized for rDS(on), switching performance and ruggedness.
Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC4D9P20X8 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 18 A |
| Current - Continuous Drain (Id) (Tc) | 75 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 109 nC |
| Input Capacitance (Ciss) (Max) | 10550 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerWDFN |
| Package Length | 3.3 mm |
| Package Name | 8-PQFN |
| Package Width | 3.3 mm |
| Power Dissipation (Max) | 40 W, 2.4 W |
| Rds On (Max) | 4.9 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) | 1.6 V |
Pricing
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CAD
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Documents
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