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Description

General part information

NTE2680

Bipolar (BJT) Transistor NPN 800 V 8 A 45 W Through Hole TO-3P(H)IS

Technical Specifications

Parameters and characteristics for this part

SpecificationNTE2680
Current - Collector (Ic) (Max)8 A
Current - Collector Cutoff (Max)1 mA
DC Current Gain (hFE) (Min)7
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-3P-3 Full Pack
Package NameTO-3P(H)IS
Power - Max45 W
Transistor TypeNPN
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)800 V

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