GP3D005A170B

Active

SemiQ

DIODE SIL CARB 1.7KV 21A TO247-2

Search across all available documentation for this part.

Active

SemiQ

DIODE SIL CARB 1.7KV 21A TO247-2

Technical Specifications

Parameters and characteristics for this part

Specification	GP3D005A170B

Current - Average Rectified (Io)	21 A
Current - Reverse Leakage @ Vr	20 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1700 V
Voltage - Forward (Vf) (Max) @ If	1.65 V

DIODE SIL CARB 1.7KV 21A TO247-2

Part	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr
SemiQ GP3D005A170B	1.65 V	0 ns	TO-247-2	TO-247-2	SiC (Silicon Carbide) Schottky	1700 V	175 ░C	-55 C	No Recovery Time	21 A	Through Hole	20 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1700 V 21A Through Hole TO-247-2

Technical documentation and resources