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BYQ30E-200,127 - TO-220-3

BYQ30E-200,127

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WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 16A TO220AB

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BYQ30E-200,127 - TO-220-3

BYQ30E-200,127

Active
WeEn Semiconductors Co., Ltd

DIODE ARRAY GP 200V 16A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYQ30E-200,127
Current - Average Rectified (Io) (per Diode)16 A
Current - Reverse Leakage @ Vr30 µA
Diode Configuration1 Pair Common Cathode
Mounting TypeThrough Hole
Operating Temperature - Junction150 °C
Package / CaseTO-220-3
Reverse Recovery Time (trr)25 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AB
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]200 V
Voltage - Forward (Vf) (Max) @ If1.25 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 702$ 0.43
Tube 1$ 0.69
50$ 0.56
100$ 0.44
500$ 0.37
1000$ 0.37

Description

General part information

BYQ30E-200,127

Diode Array 1 Pair Common Cathode 200 V 16A Through Hole TO-220-3

Documents

Technical documentation and resources

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