MJW21194G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, AUDIO, NPN, 250 V, 4 MHZ, 200 MW, 2 A, 20 ROHS COMPLIANT: YES
MJW21194G
ActiveON Semiconductor
BIPOLAR (BJT) SINGLE TRANSISTOR, AUDIO, NPN, 250 V, 4 MHZ, 200 MW, 2 A, 20 ROHS COMPLIANT: YES
Description
General part information
MJW21194 Series
The MJW21194 Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJW21194G |
|---|---|
| Current - Collector (Ic) (Max) | 16 A |
| Current - Collector Cutoff (Max) | 100 µA |
| DC Current Gain (hFE) (Min) | 20 |
| Frequency - Transition | 4 MHz |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 200 W |
| Transistor Type | NPN |
| Vce Saturation (Max) | 4 V, 4 V |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
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CAD
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Documents
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