TN2504N8-G

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Microchip Technology

TRANS MOSFET N-CH SI 40V 0.89A 4-PIN(3+TAB) SOT-89 T/R

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Microchip Technology

TRANS MOSFET N-CH SI 40V 0.89A 4-PIN(3+TAB) SOT-89 T/R

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	TN2504N8-G	TN2504 Series

	-	-
Current - Continuous Drain (Id) @ 25°C	890 mA	890 mA
Drain to Source Voltage (Vdss)	40 V	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V	5 V
FET Type	N-Channel	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	125 pF	125 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	TO-243AA	TO-243AA
Power Dissipation (Max)	1.6 W	1.6 W
Rds On (Max) @ Id, Vgs	1 Ohm	1 Ohm
Supplier Device Package	TO-243AA (SOT-89)	TO-243AA (SOT-89)
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	1.6 V	1.6 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

TRANS MOSFET N-CH SI 40V 0.89A 4-PIN(3+TAB) SOT-89 T/R

Part	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Microchip Technology TN2504N8-G
Microchip Technology TN2504N8-G	1 Ohm	N-Channel	TO-243AA	20 V	Surface Mount	10 V	5 V	-55 °C	150 °C	125 pF	MOSFET (Metal Oxide)	TO-243AA (SOT-89)	890 mA	1.6 W	1.6 V	40 V
Microchip Technology TN2504N8-G

General part information

Low threshold (1.6V max.)

High input impedance

Low input capacitance (125pF max.)

Technical documentation and resources