TMMBAT48FILM

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STMicroelectronics

DIODE SCHOTT 40V 350MA MINI MELF

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STMicroelectronics

DIODE SCHOTT 40V 350MA MINI MELF

Technical Specifications

Parameters and characteristics for this part

Specification	TMMBAT48FILM

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	350 mA
Current - Reverse Leakage @ Vr	25 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-213AA (Glass)
Reverse Recovery Time (trr)	10 ns
Speed	200 mA, 500 ns
Supplier Device Package	Mini MELF
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	750 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DIODE SCHOTT 40V 350MA MINI MELF

Part	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Mounting Type	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Capacitance @ Vr, F
STMicroelectronics TMMBAT48FILM	200 mA, 500 ns	25 µA	750 mV	Mini MELF	Surface Mount	Schottky	125 °C	-65 C	10 ns	350 mA	40 V	DO-213AA (Glass)	20 pF

General part information

Diode 40 V 350mA Surface Mount Mini MELF

Technical documentation and resources