UF4001-G

Active

Comchip Technology

DIODE GEN PURP 50V 1A DO41

Search across all available documentation for this part.

Active

Comchip Technology

DIODE GEN PURP 50V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	UF4001-G

Capacitance @ Vr, F	20 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-204AL, DO-41, Axial
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

DIODE GEN PURP 50V 1A DO41

Part	Speed	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)
Comchip Technology UF4001-G	200 mA, 500 ns	DO-41	150 °C	-55 °C	5 µA	1 A	Axial, DO-204AL, DO-41	50 V	Through Hole	20 pF	Standard	1 V	50 ns

General part information

Diode 50 V 1A Through Hole DO-41

Technical documentation and resources