NTHL040N120M3S
ActiveSILICON CARBIDE (SIC) MOSFET - ELITESIC, 40 MOHM, 1200 V, M3S, TO-247-3L
NTHL040N120M3S
ActiveSILICON CARBIDE (SIC) MOSFET - ELITESIC, 40 MOHM, 1200 V, M3S, TO-247-3L
Description
General part information
NTHL040N120M3S
The new family of 1200V M3S planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 18V gate drive but also works well with 15V gate drive.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTHL040N120M3S |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 54 A, 54 A |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 75 nC |
| Input Capacitance (Ciss) (Max) | 1700 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power Dissipation (Max) | 231 W |
| Rds On (Max) | 54 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -10 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources