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RS1GLHR3G - MFG_DO-219AB

RS1GLHR3G

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Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SUB SMA

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RS1GLHR3G - MFG_DO-219AB

RS1GLHR3G

Active
Taiwan Semiconductor Corporation

DIODE GP 400V 800MA SUB SMA

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationRS1GLHR3G
Capacitance @ Vr, F10 pF
Current - Average Rectified (Io)800 mA
Current - Reverse Leakage @ Vr5 µA
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]150 °C
Operating Temperature - Junction [Min]-55 °C
Package / CaseDO-219AB
QualificationAEC-Q101
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageSub SMA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]400 V
Voltage - Forward (Vf) (Max) @ If1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3600$ 0.18
5400$ 0.17
9000$ 0.16
45000$ 0.16

Description

General part information

RS1G Series

Diode 400 V 800mA Surface Mount Sub SMA

Documents

Technical documentation and resources