BYC30JT-600PSQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 30A TO3PF
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BYC30JT-600PSQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 30A TO3PF
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYC30JT-600PSQ |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-3PFM, SC-93-3 |
| Reverse Recovery Time (trr) | 22 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-3PF |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1920 | $ 0.65 | |
Description
General part information
BYC30JT-600PSQ
Diode 600 V 30A Through Hole TO-3PF
Documents
Technical documentation and resources
No documents available