DCP53-13

Obsolete

Diodes Inc

TRANS PNP 80V 1A SOT-223

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Obsolete

Diodes Inc

TRANS PNP 80V 1A SOT-223

Technical Specifications

Parameters and characteristics for this part

Specification	DCP53-13

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	1 W
Supplier Device Package	SOT-223-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Package / Case	Current - Collector Cutoff (Max) [Max]
Diodes Inc DCP53-16-13	500 mV	200 MHz	100	1 W	1 A	SOT-223-3	Surface Mount	80 V	-55 °C	150 °C	PNP	TO-261-4 TO-261AA	100 nA
Diodes Inc DCP53-13	500 mV	200 MHz	40	1 W	1 A	SOT-223-3	Surface Mount	80 V	-55 °C	150 °C	PNP	TO-261-4 TO-261AA	100 nA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 80 V 1 A 200MHz 1 W Surface Mount SOT-223-3

Technical documentation and resources