3N163-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 40V 50MA TO72

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Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET P-CH 40V 50MA TO72

Technical Specifications

Parameters and characteristics for this part

Specification	3N163-E3

Current - Continuous Drain (Id) @ 25°C	50 mA
Drain to Source Voltage (Vdss)	40 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	3.5 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-206AF, TO-72-4 Metal Can
Power Dissipation (Max)	375 mW
Rds On (Max) @ Id, Vgs [Max]	250 Ohm
Supplier Device Package	TO-72
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 40 V 50mA (Ta) 375mW (Ta) Through Hole TO-72

Technical documentation and resources