W949D6DBHX5I

Active

Winbond Electronics

IC DRAM 512MBIT PAR 60VFBGA

Search across all available documentation for this part.

Active

Winbond Electronics

IC DRAM 512MBIT PAR 60VFBGA

Technical Specifications

Parameters and characteristics commom to parts in this series

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

IC DRAM 512MBIT PAR 60VFBGA

Part	Memory Interface	Memory Format	Clock Frequency	Write Cycle Time - Word, Page	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Mounting Type	Technology	Memory Size	Package / Case	Access Time	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Organization
Winbond Electronics W949D6DBHX5I TR	Parallel	DRAM	200 MHz	15 ns	60-VFBGA (8x9)	1.95 V	1.7 V	Surface Mount	SDRAM - Mobile LPDDR	64 MB	60-TFBGA	5 ns	Volatile	85 °C	-40 °C	32M x 16
Winbond Electronics W949D6DBHX5E	Parallel	DRAM	200 MHz	15 ns	60-VFBGA (8x9)	1.95 V	1.7 V	Surface Mount	SDRAM - Mobile LPDDR	64 MB	60-TFBGA	5 ns	Volatile	85 °C	-25 °C	32M x 16
Winbond Electronics W949D6DBHX5I	Parallel	DRAM	200 MHz	15 ns	60-VFBGA (8x9)	1.95 V	1.7 V	Surface Mount	SDRAM - Mobile LPDDR	64 MB	60-TFBGA	5 ns	Volatile	85 °C	-40 °C	32M x 16
Winbond Electronics W949D6DBHX5E TR	Parallel	DRAM	200 MHz	15 ns	60-VFBGA (8x9)	1.95 V	1.7 V	Surface Mount	SDRAM - Mobile LPDDR	64 MB	60-TFBGA	5 ns	Volatile	85 °C	-25 °C	32M x 16

General part information

SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 5 ns 60-VFBGA (8x9)

Technical documentation and resources