IRF7822PBF

Obsolete

Infineon Technologies

MOSFET N-CH 30V 18A 8SO

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Obsolete

Infineon Technologies

MOSFET N-CH 30V 18A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	IRF7822PBF

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	5500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Technology
Infineon Technologies IRF7822PBF	30 V	5500 pF	6.5 mOhm	8-SO	4.5 V	Surface Mount	-55 °C	150 °C	12 V	18 A	N-Channel	1 V	60 nC	3.1 W	8-SOIC	3.9 mm	0.154 in	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$