SIS890ADN-T1-GE3
ActiveVishay Dale
MOSFET N-CH 100V 7.6A/24.7A PPAK
SIS890ADN-T1-GE3
ActiveVishay Dale
MOSFET N-CH 100V 7.6A/24.7A PPAK
Description
General part information
SIS890ADN-T1-GE3
MOSFET N-CH 100V 7.6A/24.7A PPAK
Technical Specifications
Parameters and characteristics for this part
| Specification | SIS890ADN-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 7.6 A |
| Drain to Source Voltage (Vdss) | 100 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 29 nC |
| Input Capacitance (Ciss) (Max) | 1330 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® 1212-8 |
| Package Name | PowerPAK® 1212-8 |
| Power Dissipation (Max) | 39 W, 3.6 W |
| Rds On (Max) | 25.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources