2SJ559-T1-A

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Renesas Electronics Corporation

MOSFET P-CH 30V 100MA SC75-3 USM

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Renesas Electronics Corporation

MOSFET P-CH 30V 100MA SC75-3 USM

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ559-T1-A

Current - Continuous Drain (Id) @ 25°C	100 mA
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	5000 pF
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Rds On (Max) @ Id, Vgs	13 Ohm
Supplier Device Package	SC-75-3, USM
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	1.7 V

Power MOSFETs for Automotive

Part	Technology	Vgs(th) (Max) @ Id [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation 2SJ559-T1-A	MOSFET (Metal Oxide)	1.7 V	SC-75, SOT-416	5000 pF	100 mA	Surface Mount	30 V	P-Channel	SC-75-3, USM	13 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1892	$ 0.16

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Power MOSFETs for Automotive

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