IRFR2405TRLPBF

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Infineon Technologies

MOSFET N-CH 55V 56A DPAK

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Infineon Technologies

MOSFET N-CH 55V 56A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR2405TRLPBF

Current - Continuous Drain (Id) @ 25°C	56 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	2430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Technology	FET Type	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)
Infineon Technologies IRFR2405TRR	16 mOhm	-55 °C	175 ░C	Surface Mount	20 V	10 V	TO-252AA (DPAK)	2430 pF	56 A	110 nC	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	N-Channel	110 W	55 V
Infineon Technologies IRFR2405TRLPBF	16 mOhm	-55 °C	175 ░C	Surface Mount	20 V	10 V	TO-252AA (DPAK)	2430 pF	56 A	110 nC	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	N-Channel	110 W	55 V

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