GCMX040B120S1-E1

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SemiQ

SIC 1200V 40M MOSFET SOT-227

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SemiQ

SIC 1200V 40M MOSFET SOT-227

Technical Specifications

Parameters and characteristics for this part

Specification	GCMX040B120S1-E1

Current - Continuous Drain (Id) @ 25°C	57 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	121 nC
Input Capacitance (Ciss) (Max) @ Vds	3185 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	242 W
Rds On (Max) @ Id, Vgs	52 mOhm
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide Junction Transistor)
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

SIC 1200V 40M MOSFET SOT-227

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Min]	Vgs (Max) [Max]
SemiQ GCMX040B120S1-E1	242 W	3185 pF	4 V	SiC (Silicon Carbide Junction Transistor)	1200 V	52 mOhm	SOT-227-4, miniBLOC	N-Channel	-55 °C	175 ░C	121 nC	Chassis Mount	SOT-227	57 A	-10 V	25 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 57A (Tc) 242W (Tc) Chassis Mount SOT-227

Technical documentation and resources