GE17045EEA3

Active

GE Aerospace

SIC 6N-CH 1700V 425A

Search across all available documentation for this part.

Active

GE Aerospace

SIC 6N-CH 1700V 425A

Technical Specifications

Parameters and characteristics for this part

Specification	GE17045EEA3

Configuration	6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C	425 A
Drain to Source Voltage (Vdss)	1.7 kV
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Qg) (Max) @ Vgs	1207 nC
Input Capacitance (Ciss) (Max) @ Vds	29100 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Rds On (Max) @ Id, Vgs	4.45 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

SIC 6N-CH 1700V 425A

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Configuration	Rds On (Max) @ Id, Vgs
GE Aerospace GE17045EEA3	29100 pF	150 °C	-55 °C	1.7 kV	1700 V	Module	425 A	4.5 V	Chassis Mount	Silicon Carbide (SiC)	1207 nC	6 N-Channel (3-Phase Bridge)	4.45 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1700V (1.7kV) 425A (Tc) 1250W (Tc) Chassis Mount

Technical documentation and resources