NTH4L060N065SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 47 A, 650 V, 0.044 OHM, TO-247
NTH4L060N065SC1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 47 A, 650 V, 0.044 OHM, TO-247
Description
General part information
NTH4L060N065SC1 Series
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Technical Specifications
Parameters and characteristics for this part
| Specification | NTH4L060N065SC1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 47 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On) | 15 V |
| Drive Voltage (Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 74 nC |
| Input Capacitance (Ciss) (Max) | 1473 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-4 |
| Package Name | TO-247-4L |
| Power Dissipation (Max) | 176 W |
| Rds On (Max) | 70 mOhm |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) Negative | -8 V |
| Vgs (Max) Positive | 22 V |
| Vgs(th) (Max) | 4.3 V |
Pricing
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